NDT452AP
Manufacturer:
On Semiconductor
Mfr.Part #:
NDT452AP
Datasheet:
Description:
MOSFETs SOT-223-4 SMD/SMT P-Channel number of channels:1 3 W -30 V Continuous Drain Current (ID):5 A 30 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -30 V |
| Width | 6.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -65 °C |
| Number of Pins | 4 |
| Resistance | 65 mΩ |
| Height | 1.8 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 5 A |
| Current Rating | -5 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 1.1 W |
| Power Dissipation | 3 W |
| Threshold Voltage | -1.6 V |
| Number of Channels | 1 |
| Input capacitance | 690 pF |
| Continuous Drain Current (ID) | 5 A |
| Rds On Max | 65 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 40 ns |
| Fall Time | 19 ns |
| Rise Time | 20 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 30 nC |
| Drain to Source Resistance | 65 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1.6 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2.8 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 11959
Distributors
pcbx
pcbxUnit Price$0.86348
Ext.Price$0.86348
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.86348 | $0.86348 |
| 10 | $0.56767 | $5.67670 |
| 25 | $0.50120 | $12.53000 |
| 50 | $0.44251 | $22.12550 |
| 100 | $0.39070 | $39.07000 |
| 300 | $0.34580 | $103.74000 |
| 500 | $0.30607 | $153.03500 |
| 1000 | $0.25563 | $255.63000 |
| 3000 | $0.23561 | $706.83000 |
| 5000 | $0.21715 | $1085.75000 |